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revisions ltr description date (yr-mo-da) approved a make changes to tr(tr), tr(os), sr+, sr-, ni(bb), ni(pc), cs tests as specified in table i , 1.5, 4.4.1b, and table ii. - ro 99-10-20 r. monnin b add test conditions to the input offset voltage temperature sensitivity test and the input offset current tem perature sensitivity test in table i. make changes to the title in table iib. editorial changes throughout. - rrp 99-11-17 r. monnin c add radiation hardened level ?l? devices and delete figures 1 and 3. - ro 02-06-13 r. monnin rev sheet rev c c sheet 15 16 rev status rev c c c c c c c c c c c c c c of sheets sheet 1 2 3 4 5 6 7 8 9 10 11 12 13 14 pmic n/a prepared by rajesh pithadia defense supply center columbus standard microcircuit drawing checked by rajesh pithadia columbus, ohio 43216 http://www.d scc.dla.mil this drawing is available for use by all departments approved by raymond monnin microcircuit, linear, radiation hardened, quad operational amplifier, and agencies of the department of defense drawing approval date 98-11-06 monolithic silicon amsc n/a revision level c size a cage code 67268 5962-99504 sheet 1 of 16 dscc form 2233 apr 97 5962-e448-02 distribution statement a . approved for public releas e; distribution is unlimited.
standard microcircuit drawing size a 5962-99504 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 2 dscc form 2234 apr 97 1. scope 1.1 scope . this drawing documents two product assurance class le vels consisting of high reliability (device classes q and m) and space application (device class v). a choice of case outlines and lead finishes are available and are reflected in the part or identifying number (pin). when available, a choice of radiation hardness assurance (rha ) levels are reflected in the pin. 1.2 pin . the pin is as shown in the following example: 5962 r 99504 01 m v x federal stock class designator rha designator (see 1.2.1) device type (see 1.2.2) device class designator case outline (see 1.2.4) lead finish (see 1.2.5) \ / (see 1.2.3) \/ drawing number 1.2.1 rha designator . device classes q and v rha marked devices meet the mil-prf-38535 specified rha levels and are marked with the appropriate rha designator. device class m rha marked devices meet the mil-prf-38535, appendix a specified rha levels and are marked with the appropriate rha designator. a dash (-) indicates a non-rha device. 1.2.2 device type(s) . the device type(s) identify the circuit function as follows: device type generic number circuit function 01 lm124a quad, operational amplifier 1.2.3 device class designator . the device class designator is a single letter identifying the product assurance level as follows: device class device requirements documentation m vendor self-certification to the requirements for mil-std-883 compliant, non- jan class level b microcircuits in accordance with mil-prf-38535, appendix a q or v certification and qualification to mil-prf-38535 1.2.4 case outline(s) . the case outline(s) are as designated in mil-std-1835 and as follows: outline letter descriptive designator terminals package style c gdip1-t14 or cdip2-t14 14 dual-in-line d gdfp1-f14 or cdfp2-f14 14 flat pack z gdfp1-g14 14 flat pack with gull wing leads 1.2.5 lead finish . the lead finish is as specified in mil-pr f-38535 for device classes q and v or mil-prf-38535, appendix a for device class m.
standard microcircuit drawing size a 5962-99504 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 3 dscc form 2234 apr 97 1.3 absolute maximum ratings . 1 / supply voltage range (+v cc ) ..................................................................... 32 v dc or 16 v dc input voltage range ..................................................................................... -0.3 v dc to +32 v dc differential input voltage .............................................................................. 32 v dc input current (v in < -0.3 v dc) ..................................................................... 50 ma 2 / power dissipation: 3 / case c ..................................................................................................... 1260 mw cases d and z ......................................................................................... 700 mw storage temperat ure range ......................................................................... -65 c to +150 c output short-circuit to gnd: 4 / (one amplifier, +v cc 15 v dc and t a = 25 c) ..................................... continuous lead temperature (solder ing, 10 sec onds) ................................................. 260 c maximum junction temperature (t j ) ............................................................ 150 c thermal resistance, junction-to-case ( jc ): case c ..................................................................................................... 19 c/w cases d and z ......................................................................................... 18 c/w thermal resistance, junction-to-ambient ( ja ): case c ..................................................................................................... 103 c/w (still air) 51 c/w (500 lf/min air flow) cases d and z ......................................................................................... 176 c/w (still air) 116 c/w (500 lf/min air flow) 1.4 recommended operating conditions . supply vo ltage range .................................................................................. 5 v to 30 v ambient operating temperature range (t a ) ................................................. -55 c to +125 c 1.5 radiation features . maximum total dose available (dose rate = 50 ? 300 rads(si) / s) rha designator l .................................................................................... 50 krads (si) 5 / maximum total dose available (dose rate = 50 ? 300 rads(si) / s) rha designator r ................................................................................... 100 krads (si) 5 / ______ 1 / stresses above the absolute maximum rating may cause permanent damage to the device. extended operation at the maximum levels may degrade performance and affect reliability. 2 / this input current will only exist when the voltage at any of the input leads is driven negative. it is due to the collecto r-base junction of the input pnp transistors bec oming forward biased and thereby acting as input diode clamps. in addition to this diode action, there is also lateral npn par asitic transistor action on the ic chip. this transistor acti on can cause the outpu t voltages of the operational amplifiers to go to the +v cc voltage level (or to ground for a large overdrive) for the time duration that an input is driven negative. this is not destr uctive and normal output states will re-establish when the input voltage, which was negative, again returns to a value greater than ?0.3 v dc at 25 c. 3 / the maximum power dissipation must be derated at elevated temperatures and is dictated by t j , ja , and t a . the maximum allowable power dissipation at any temperature is p d = (t j ? t a ) / ja or the number given in 1.3 herein, whichever is lower. 4 / short circuits from the output to +v cc can cause excessive heating and eventual destruction. when considering short circuits to ground, the maximum output current is approximately 40 ma independent of the magnitude of +v cc . at values of supply voltage in excess of +15 v dc, continuous short- circuits can exceed the power dissipation ratings and cause eventual destruction. destructive dissipation can re sult from simultaneous shorts on all amplifiers. 5 / these parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. radiation end point limits for the noted parameters are guaranteed only for the conditions specified in mil-std-883, test method 1019, condition a.
standard microcircuit drawing size a 5962-99504 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 4 dscc form 2234 apr 97 2. applicable documents 2.1 government specification, standards, and handbooks . the following specification, standards, and handbooks form a part of this drawing to the extent specified herein. unless ot herwise specified, the issues of these documents are those liste d in the issue of the department of defense i ndex of specifications and standards (dodi ss) and supplement thereto, cited in the solicitation. specification department of defense mil-prf-38535 - integrated circuits, manufacturing, general specification for. standards department of defense mil-std-883 - test method standard microcircuits. mil-std-1835 - interface standard electronic component case outlines. handbooks department of defense mil-hdbk-103 - list of standard microcircuit drawings. mil-hdbk-780 - standard microcircuit drawings. (unless otherwise indicated, copies of the specificat ion, standards, and handbooks are ava ilable from the standardization document order desk, 700 robbins avenue, building 4d, philadelphia, pa 19111-5094.) 2.2 order of precedence . in the event of a conflict between the text of th is drawing and the references cited herein, the text of this drawing takes precedence. nothing in this docum ent, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. requirements 3.1 item requirements . the individual item requirements for device classes q and v shall be in accordance with mil-prf-38535 and as specified herein or as modified in the device manufacturer' s quality management (qm) plan. the modification in the qm plan shall not affect the form, fit, or function as described herein. the individual item requirements for device class m shall be in accordance with mil-prf-38535, appendix a for non-jan class level b devices and as specified herein. 3.2 design, construction, and physical dimensions . the design, construction, and physica l dimensions shall be as specified in mil-prf-38535 and herein for device classes q and v or mil-prf-38535, appendix a and herein for device class m. 3.2.1 case outlines . the case outlines shall be in accordance with 1.2.4 herein. 3.2.2 terminal connections . the terminal connections sha ll be as specified on figure 1. 3.2.3 radiation exposure circuit . the radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 electrical performanc e characteristics and post i rradiation parameter limits . unless otherwise specified herein, the electrical performance characteristics and pos t irradiation parameter limits are as s pecified in table i and shall apply over t he full ambient operating temperature range. 3.4 electrical test requirements . the electrical test requirements shall be the subgroups specified in tabl e iia. the electrical tests for each subgroup are defined in table i.
standard microcircuit drawing size a 5962-99504 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 5 dscc form 2234 apr 97 table i. electrical per formance characteristics . test symbol conditions 1 / 2 / -55 c t a +125 c unless otherwise specified group a subgroups device type limits unit min max input offset voltage v io +v cc = 30 v, -v cc = gnd, 1 01 -2 2 mv v cm = -15 v 2, 3 -4 4 l, r 1 -2.2 2.2 +v cc = 2 v, -v cc = -28, 1 01 -2 2 mv v cm = 13 v 2, 3 -4 4 l, r 1 -2.2 2.2 +v cc = 5 v, -v cc = gnd, 1 01 -2 2 mv v cm = -1.4 v 2, 3 -4 4 l, r 1 -2.2 2.2 +v cc = 2.5 v, -v cc = -2.5, 1 01 -2 2 mv v cm = -1.1 v 2, 3 -4 4 l, r 1 -2.2 2.2 input offset current i io +v cc = 30 v, -v cc = gnd, 1, 2 01 -10 10 na v cm = -15 v 3 -30 30 l, r 1 -15 15 +v cc = 2 v, -v cc = -28, 1, 2 01 -10 10 na v cm = 13 v 3 -30 30 l, r 1 -15 15 see footnotes at end of table.
standard microcircuit drawing size a 5962-99504 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 6 dscc form 2234 apr 97 table i. electrical per formance characteristics - continued. test symbol conditions 1 / 2 / -55 c t a +125 c unless otherwise specified group a subgroups device type limits unit min max input offset current i io +v cc = 5 v, -v cc = gnd, 1, 2 01 -10 10 na v cm = -1.4 v 3 -30 30 l, r 1 -15 15 +v cc = 2.5 v, -v cc = -2.5, 1, 2 01 -10 10 na v cm = 1.1 v 3 -30 30 l, r 1 -15 15 input bias current +i ib +v cc = 30 v, -v cc = gnd, 1, 2 01 -50 +0.1 na v cm = -15 v 3 -100 +0.1 l, r 1 -75 +0.1 +v cc = 2 v, -v cc = -28, 1, 2 01 -50 +0.1 na v cm = 13 v 3 -100 +0.1 l, r 1 -75 +0.1 +v cc = 5 v, -v cc = gnd, 1, 2 01 -50 +0.1 na v cm = -1.4 v 3 -100 +0.1 l, r 1 -75 +0.1 +v cc = 2.5 v, -v cc = -2.5 v, 1, 2 01 -50 +0.1 na v cm = 1.1 v 3 -100 +0.1 l, r 1 -75 +0.1 see footnotes at end of table.
standard microcircuit drawing size a 5962-99504 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 7 dscc form 2234 apr 97 table i. electrical per formance characteristics - continued. test symbol conditions 1 / 2 / -55 c t a +125 c unless otherwise specified group a subgroups device type limits unit min max input bias current -i ib +v cc = 30 v, -v cc = gnd, 1, 2 01 -50 +0.1 na v cm = -15 v 3 -100 +0.1 l, r 1 -75 +0.1 +v cc = 2 v, -v cc = -28, 1, 2 01 -50 +0.1 na v cm = 13 v 3 -100 +0.1 l, r 1 -75 +0.1 +v cc = 5 v, -v cc = gnd, 1, 2 01 -50 +0.1 na v cm = -1.4 v 3 -100 +0.1 l, r 1 -75 +0.1 +v cc = 2.5 v, -v cc = -2.5 v, 1, 2 01 -50 +0.1 na v cm = 1.1 v 3 -100 +0.1 l, r 1 -75 +0.1 power supply rejection ratio +psrr -v cc = gnd, v cm = -1.4 v, 5 v v cc 30 v 1, 2, 3 01 -100 100 v/v common mode rejection ratio cmrr 1, 2, 3 01 76 db output short circuit current i os+ +v cc = 30 v, -v cc = gnd, v out = 25 v 1, 2, 3 01 -70 ma see footnotes at end of table.
standard microcircuit drawing size a 5962-99504 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 8 dscc form 2234 apr 97 table i. electrical per formance characteristics - continued. test symbol conditions 1 / 2 / -55 c t a +125 c unless otherwise specified group a subgroups device type limits unit min max power supply current i cc +v cc = 30 v, 1, 2 01 3 ma -v cc = gnd 3 4 input offset voltage temperature sensitivity ? v io / ? t +v cc = 5 v, -v cc = gnd, v cm = -1.4 v 3 / 2, 3 01 -30 30 v/ c input offset current temperature sensitivity ? i io / ? t +v cc = 5 v, -v cc = gnd, v cm = -1.4 v 3 / 2 01 -400 400 pa/ c 3 -700 700 logical ?0? output voltage v ol +v cc = 30 v, -v cc = gnd, r l = 10 k ? 4, 5, 6 01 35 mv +v cc = 30 v, -v cc = gnd, i ol = 5 ma 4, 5, 6 01 1.5 v +v cc = 4.5 v, -v cc = gnd, i ol = 2 a 4, 5, 6 01 0.4 v logical ?1? output voltage v oh +v cc = 30 v, -v cc = gnd, i oh = -10 ma 4, 5, 6 01 27 v +v cc = 4.5 v, -v cc = gnd, i oh = -10 ma 4, 5, 6 01 2.4 v see footnotes at end of table.
standard microcircuit drawing size a 5962-99504 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 9 dscc form 2234 apr 97 table i. electrical per formance characteristics - continued. test symbol conditions 1 / 2 / -55 c t a +125 c unless otherwise specified group a subgroups device type limits unit min max voltage gain a vs+ +v cc = 30 v, -v cc = gnd, 4 01 50 v/mv 1 v v out 26 v, r l = 10 k ? 5, 6 25 l, r 1 40 +v cc = 30 v, -v cc = gnd, 4 01 50 v/mv 5 v v out 20 v, r l = 2 k ? 5, 6 25 l, r 1 40 voltage gain a vs +v cc = 5 v, -v cc = gnd, 1 v v out 2.5 v, r l = 10 k ? 4, 5, 6 01 10 v/mv +v cc = 5 v, -v cc = gnd, 1 v v out 2.5 v, r l = 2 k ? 4, 5, 6 01 10 maximum output voltage swing +v op +v cc = 30 v, -v cc = gnd, v out = +30 v, r l = 10 k ? 4, 5, 6 01 27 v +v cc = 30 v, -v cc = gnd, v out = +30 v, r l = 2 k ? 4, 5, 6 01 26 v transient response: rise time tr(t r ) +v cc = 30 v, -v cc = gnd 7, 8a, 8b 01 1 s transient response: overshoot tr(os) +v cc = 30 v, -v cc = gnd 7, 8a, 8b 01 50 % see footnotes at end of table.
standard microcircuit drawing size a 5962-99504 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 10 dscc form 2234 apr 97 table i. electrical per formance characteristics - continued. test symbol conditions 1 / 2 / -55 c t a +125 c unless otherwise specified group a subgroups device type limits unit min max slew rate: rise sr+ +v cc = 30 v, -v cc = gnd 7, 8a, 8b 01 0.1 v/ s slew rate: fall sr- +v cc = 30 v, -v cc = gnd 7, 8a, 8b 01 0.1 v/ s noise broadband ni(bb) +v cc = 15 v, -v cc = -15 v, bw = 10 hz to 5 khz 7 01 15 v/rms noise popcorn ni(pc) +v cc = 15 v, -v cc = -15 v, r s = 20 k ? , bw = 10 hz to 5 khz 7 01 50 v/peak channel separation cs +v cc = 30 v, -v cc = gnd, r l = 2 k ? 7 01 80 db r l = 2 k ? , 4 / v in = 1 v and 16 v, a to b 7 01 80 db r l = 2 k ? , 4 / v in = 1 v and 16 v, a to c 7 01 80 db r l = 2 k ? , 4 / v in = 1 v and 16 v, a to d 7 01 80 db r l = 2 k ? , 4 / v in = 1 v and 16 v, b to a 7 01 80 db r l = 2 k ? , 4 / v in = 1 v and 16 v, b to c 7 01 80 db r l = 2 k ? , 4 / v in = 1 v and 16 v, b to d 7 01 80 db r l = 2 k ? , 4 / v in = 1 v and 16 v, c to a 7 01 80 db r l = 2 k ? , 4 / v in = 1 v and 16 v, c to b 7 01 80 db r l = 2 k ? , 4 / v in = 1 v and 16 v, c to d 7 01 80 db see footnotes at end of table.
standard microcircuit drawing size a 5962-99504 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 11 dscc form 2234 apr 97 table i. electrical per formance characteristics - continued. test symbol conditions 1 / 2 / -55 c t a +125 c unless otherwise specified group a subgroups device type limits unit min max channel separation cs r l = 2 k ? , 4 / v in = 1 v and 16 v, d to a 7 01 80 db r l = 2 k ? , 4 / v in = 1 v and 16 v, d to b 7 01 80 db r l = 2 k ? , 4 / v in = 1 v and 16 v, d to c 7 01 80 db 1 / devices supplied to this drawing have been characterized through a ll levels m, d, p, l, r of irradiation. however, this device is only tested at the ?l? and ?r? levels. pre and post irradiation values are identical unless otherwise specified in table i. when performing post irradiation electrical measurements for any rha level, t a = +25 c. 2 / these parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. radiation end point limits for the not ed parameters are guaranteed only for the c onditions specified in mil-std-883, test method 1019, condition a. 3 / calculated parameter. 4 / +v cc = 30 v, -v cc = 0 v. 3.5 marking . the part shall be marked with the pin listed in 1.2 her ein. in addition, the manufacturer's pin may also be marked as listed in mil-hdbk-103. for pa ckages where marking of the entire smd pi n number is not feasible due to space limitations, the manufacturer has the option of not marking the "5962-" on the device. for rha product using this option, the rha designator shall still be marked. marking for device cl asses q and v shall be in accordance with mil-prf-38535. marking for device class m shall be in accordance with mil-prf-38535, appendix a. 3.5.1 certification/compliance mark . the certification mark for device classes q and v shall be a "qml" or "q" as required in mil-prf-38535. the compliance mark for device class m shall be a "c" as required in mil-prf-38535, appendix a. 3.6 certificate of compliance . for device classes q and v, a certificate of compliance shall be required from a qml-38535 listed manufacturer in order to supply to t he requirements of this drawing (see 6.6.1 herein). for device class m, a certifica te of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in mil-hdbk-103 (see 6.6.2 herein). the certificate of compliance submitted to ds cc-va prior to listing as an approv ed source of supply for this drawing shall affirm that the manufactu rer's product meets, for device classes q and v, the requirements of mil-prf-38535 and herein or for device class m, the requi rements of mil-prf-38535, appendix a and herein. 3.7 certificate of conformance . a certificate of conformance as required for device classes q and v in mil-prf-38535 or for device class m in mil-prf-38535, appendix a shall be provided with each lot of microcircuits delivered to this drawing. 3.8 notification of change for device class m . for device class m, notification to dscc-va of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change as defined in mil-prf-38535, appendix a. 3.9 verification and review for device class m . for device class m, dscc, dscc's agent, and the acquiring activity retain the option to review the manufacturer's facility and applicable required documentation. offs hore documentation shall be made available onshore at the option of the reviewer. 3.10 microcircuit group assignment for device class m . device class m devices covered by this drawing shall be in microcircuit group number 49 (see mil-prf-38535, appendix a).
standard microcircuit drawing size a 5962-99504 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 12 dscc form 2234 apr 97 device type 01 case outlines c, d, and z terminal number terminal symbol 1 output 1 2 -input 1 3 +input 1 4 +v cc 5 +input 2 6 -input 2 7 output 2 8 output 3 9 -input 3 10 +input 3 11 gnd 12 +input 4 13 -input 4 14 output 4 figure 1. terminal connections .
standard microcircuit drawing size a 5962-99504 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 13 dscc form 2234 apr 97 4. quality assurance provisions 4.1 sampling and inspection . for device classes q and v, sampling and inspection procedures shall be in accordance with mil-prf-38535 or as modified in the device manufacturer's qua lity management (qm) plan. the modification in the qm plan shall not affect the form, fit, or function as described herein. for device class m, sampling and inspection procedures shall be in accordance with mil-prf-38535, appendix a. 4.2 screening . for device classes q and v, screening shall be in accordance with mil-prf-38535, and shall be conducted on all devices prior to qualification and technology conform ance inspection. for device class m, screening shall be in accordance with method 5004 of mil-std-883, and shall be conduct ed on all devices prior to qua lity conformance inspection. 4.2.1 additional criteria for device class m . a. burn-in test, method 1015 of mil-std-883. (1) test condition a, b, c, or d. the test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. the test circuit shall specify the inputs, outputs, biases, and pow er dissipation, as applicable, in acco rdance with the intent specified in test method 1015. (2) t a = +125 c, minimum. b. interim and final electrical test parameter s shall be as specified in table iia herein. 4.2.2 additional criteria for device classes q and v . a. the burn-in test duration, test condi tion and test temperature, or approved alte rnatives shall be as specified in the device manufacturer's qm plan in accordance with mil-prf- 38535. the burn-in test circuit shall be maintained under document revision level control of the device manufacturer' s technology review board (trb) in accordance with mil-prf-38535 and shall be made available to the acquiring or preparing activity upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015 of mil-std-883. b. interim and final electrical test parameter s shall be as specified in table iia herein. c. additional screening for device class v beyond the require ments of device class q shall be as specified in mil-prf-38535, appendix b. 4.3 qualification inspection for device classes q and v . qualification inspection for device classes q and v shall be in accordance with mil-prf-38535. inspections to be perform ed shall be those specified in mil-prf-38535 and herein for groups a, b, c, d, and e inspec tions (see 4.4.1 through 4.4.4). 4.4 conformance inspection . technology conformance inspection for cl asses q and v shall be in accordance with mil-prf-38535 including groups a, b, c, d, and e inspections and as specified herein. qualit y conformance inspection for device class m shall be in accordance with mil-prf-38535, appendi x a and as specified herein. inspections to be performed for device class m shall be those specified in method 5005 of mi l-std-883 and herein for groups a, b, c, d, and e inspections (see 4.4.1 through 4.4.4). 4.4.1 group a inspection . a. tests shall be as specified in table iia herein. b. subgroups 9, 10, and 11 in table i, me thod 5005 of mil-std-883 shall be omitted.
standard microcircuit drawing size a 5962-99504 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 14 dscc form 2234 apr 97 table iia. electrical test requirements . test requirements subgroups (in accordance with mil-std-883, method 5005, table i) subgroups (in accordance with mil-prf-38535, table iii) device class m device class q device class v interim electrical parameters (see 4.2) 1 1 1 final electrical parameters (see 4.2) 1, 2, 3, 4 1 / 1, 2, 3, 4 1 / 1, 2, 3, 4 1 / group a test requirements (see 4.4) 1, 2, 3, 4, 5, 6, 7 1, 2, 3, 4, 5, 6, 7 1, 2, 3, 4, 5, 6, 7, 8a, 8b group c end-point electrical parameters (see 4.4) 1 1 1, 2, 3 2 / group d end-point electrical parameters (see 4.4) 1 1 1, 2, 3 group e end-point electrical parameters (see 4.4) 1 1 1 1 / pda applies to subgroup 1. 2 / delta limits as specified in table iib shall be required where specified, and the delta limits shall be computed with reference to the previous endpoint el ectrical parameters. table iib. group c end-point electrical parameters (+25 c) . parameter device type delta limit min max v io 1 / 01 -0.5 mv 0.5 mv +i ib 1 / 01 -10 na 10 na -i ib 1 / 01 -10 na 10 na 1 / +v cc = 30 v, -v cc = gnd, v cm = -15 v. 4.4.2 group c inspection . the group c inspection end-point electrical paramet ers shall be as specified in table iia herein. 4.4.2.1 additional criteria for device class m . steady-state life test conditions, method 1005 of mil-std-883: a. test condition a, b, c, or d. the test circuit s hall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acqui ring activity upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of mil-std-883. b. t a = +125 c, minimum. c. test duration: 1,000 hours, except as permitted by method 1005 of mil-std-883.
standard microcircuit drawing size a 5962-99504 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 15 dscc form 2234 apr 97 4.4.2.2 additional criteria for device classes q and v . the steady-state life test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's qm plan in accordance with mil-prf-38535. the test circuit shall be maintained under document revision level c ontrol by the device manufacturer's trb in accordance with mil-prf-38535 and shall be made available to the acquiring or prepar ing activity upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of mil-std-883. 4.4.3 group d inspection . the group d inspection end-point electrical paramet ers shall be as specified in table iia herein. 4.4.4 group e inspection . group e inspection is required only for par ts intended to be marked as radiation hardness assured (see 3.5 herein). rha levels for device classes m, q, and v shall be as specified in mil-prf-38535. end-point electrical parameters shall be as specified in table iia herein. 4.4.4.1 total dose irradiation testing . total dose irradiation testing shall be performed in accordance with mil-std-883 method 1019 condition a and as specified herein. 4.4.4.1.1 accelerated aging test . accelerated aging tests shall be performed on all devices requiring a rha level greater than 5k rads(si). the post-anneal end-point el ectrical parameter limits shall be as s pecified in table i herein and shall be th e pre-irradiation end-point electr ical parameter limit at 25 c 5 c. testing shall be performed at initial qualification and after any design or process changes which may affe ct the rha response of the device. 4.4.4.2 dose rate burnout . when required by the customer test sha ll be performed on devices, sec, or approved test structures at technology qualifications and after any design or process changes which may effect the rha capability of the process. dose rate burnout shall be performed in accordance with test method 1023 of mil-std-883 and as specified herein. 5. packaging 5.1 packaging requirements . the requirements for packaging shall be in accordance with mil-prf-38535 for device classes q and v or mil-prf-38535, appendix a for device class m. 6. notes 6.1 intended use . microcircuits conforming to this drawing are intended for use for gove rnment microcircuit applications (original equipment), design applic ations, and logistics purposes. 6.1.1 replaceability . microcircuits covered by this drawing will repl ace the same generic device covered by a contractor prepared specification or drawing. 6.1.2 substitutability . device class q devices will replace device class m devices. 6.2 configuration control of smd's . all proposed changes to existing smd's will be coordinated with the users of record for the individual documents. this coordination will be accomplished using dd form 1692, engineering change proposal. 6.3 record of users . military and industrial users should inform de fense supply center columbus when a system application requires configuration control and which smd's are applic able to that system. dscc will maintain a record of users and this list will be used for coordination and distribution of changes to the drawings. users of drawings covering microelectronic devices (fsc 5962) shoul d contact dscc-va, telephone (614) 692-0544. 6.4 comments . comments on this drawing should be directed to dscc-va , columbus, ohio 43216-5000, or telephone (614) 692-0547. 6.5 abbreviations, symbols, and definitions . the abbreviations, symbols, and definitions used herein are defined in mil-prf-38535 and mil-hdbk-1331.
standard microcircuit drawing size a 5962-99504 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 16 dscc form 2234 apr 97 6.6 sources of supply . 6.6.1 sources of supply for device classes q and v . sources of supply for device classes q and v are listed in qml-38535. the vendors listed in qml-38535 have submitted a certificate of compliance (see 3.6 herein) to dscc-va and have agreed to this drawing. 6.6.2 approved sources of supply for device class m . approved sources of supply for cl ass m are listed in mil-hdbk-103. the vendors listed in mil-hdbk-103 have agreed to this drawi ng and a certificate of compliance (see 3.6 herein) has been submitted to and accepted by dscc-va.
standard microcircuit drawing bulletin date: 02-06-13 approved sources of supply for smd 5962-99504 are listed below for immediate acquisition information only and shall be added to mil-hdbk-103 and qml-38535 during the next revision. mil-hdbk-103 and qml-38535 will be revised to include the addition or deletion of sources. the vendors listed below have agreed to this drawing and a certificate of compliance has been submitted to and accept ed by dscc-va. this bulletin is superseded by the next dated revision of mil-hdbk-103 and qml-38535. standard microcircuit drawing pin 1 / vendor cage number vendor similar pin 2 / 5962l9950401vca 27014 lm124ajlqmlv 5962L9950401VDA 27014 lm124awlqmlv 5962l9950401vza 27014 lm124awglqmlv 5962r9950401qca 3 / lm124ajrqml 5962r9950401qda 3 / lm124awrqml 5962r9950401qza 3 / lm124awgrqml 5962r9950401vca 27014 lm124ajrqmlv 5962r9950401vda 27014 lm124awrqmlv 5962r9950401vza 27014 lm124awgrqmlv 1 / the lead finish shown for each pin representing a hermetic package is the most readily available from the manufacturer listed for that part. if the desired lead finish is not listed contact the vendor to determine its availability. 2 / caution . do not use this number for item acquisition. items acquired to this number may not satisfy the performance requirements of this drawing. 3 / not available from an approved source of supply. vendor cage vendor name number and address 27014 national semiconductor 2900 semiconductor drive p.o. box 58090 santa clara, ca 95052-8090 the information contained herein is disseminated for convenience only and the government assumes no liability whatsoever for any inaccuracies in the information bulletin.

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